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IRL8114 N-Channel MOSFET

IRL8114 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL8114，IIRL8114 *.

IRL8114 Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRL8114 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 440 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRL8114
Manufacturer
INCHANGE
File Size
241.79 KB
Datasheet
IRL8114-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRL8114-like datasheet