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FQA8N100C N-Channel MOSFET

FQA8N100C Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQA8N100C *.

FQA8N100C Features

* With TO-3PN packaging
* High speed switching
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FQA8N100C Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 8 5 32 PD Total Dissipation 225 Tj Operati

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Datasheet Details

Part number
FQA8N100C
Manufacturer
INCHANGE
File Size
206.04 KB
Datasheet
FQA8N100C-INCHANGE.pdf
Description
N-Channel MOSFET

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