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FQA8N90C 900V N-Channel MOSFET

FQA8N90C Description

FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQA8N90C Features

* 8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! TO-3P G DS FQA Series ! S Absolute Maximum Ra

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