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FQA8N90C_F109 N-Channel QFET MOSFET

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Description

FQA8N90C_F109 * N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 8 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 4 V
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested

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FQA8N90C_F109 N-Channel QFET MOSFET Fairchild Semiconductor
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