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FQA8N80C_F109 MOSFET

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Description

FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
* Low gate charge ( typical 35 nC)
* Low Crss ( typical 13pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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