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FCP850N80Z - N-Channel MOSFET

FCP850N80Z Description

isc N-Channel MOSFET Transistor FCP850N80Z *.

FCP850N80Z Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCP850N80Z Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 8 A IDM Drain Current-Single Pulsed 18 A PD Total Dissipation 136

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Datasheet Details

Part number
FCP850N80Z
Manufacturer
INCHANGE
File Size
253.16 KB
Datasheet
FCP850N80Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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