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FCP11N60N N-Channel MOSFET

FCP11N60N Description

FCP11N60N / FCPF11N60NT * N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCP11N60N Features

* RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A
* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF)
* 100% Avalanche Tested

FCP11N60N Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain

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N-Channel MOSFET Fairchild Semiconductor
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