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FCP13N60N N-Channel MOSFET

FCP13N60N Description

isc N-Channel MOSFET Transistor *.

FCP13N60N Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCP13N60N Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 13 8.2 A IDM Drain Current-Single Pulsed 39 A PD Total Dis

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Datasheet Details

Part number
FCP13N60N
Manufacturer
INCHANGE
File Size
253.30 KB
Datasheet
FCP13N60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCP13N60N-like datasheet