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FCP125N65S N-Channel MOSFET

FCP125N65S Description

isc N-Channel MOSFET Transistor *.

FCP125N65S Features

* Static drain-source on-resistance: RDS(on) ≤2.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and gen

FCP125N65S Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 24 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 181 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

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Datasheet Details

Part number
FCP125N65S
Manufacturer
INCHANGE
File Size
241.14 KB
Datasheet
FCP125N65S-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCP125N65S-like datasheet