AOD3N60 Datasheet - INCHANGE

AOD3N60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOD3N60

Features

* Drain Current
* ID= 2.5A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 56.8 W TJ Max. Operating Junction Tempe

AOD3N60-INCHANGE.pdf