AOD11S60 Datasheet - INCHANGE

AOD11S60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOD11S60

Features

* Drain Current
* ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 208 W TJ Max. Operating Junction Temperat

AOD11S60-INCHANGE.pdf