AOD1N60 Datasheet - INCHANGE

AOD1N60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOD1N60

Features

* Drain Current
* ID=1.3A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 1.3 A IDM Drain Current-Single Pluse 4 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperatu

AOD1N60-INCHANGE.pdf