HY57V658020B - 4 Banks x 2M x 8Bit Synchronous DRAM

Name: HY57V658020B
SKU: HY57V658020B-237418

Hynix Semiconductor

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Datasheet Details

Part number	HY57V658020B
Manufacturer	Hynix Semiconductor
File Size	146.35 KB
Description	4 Banks x 2M x 8Bit Synchronous DRAM
Datasheet	HY57V658020B_HynixSemiconductor.pdf

HY57V658020B Product details

Description

The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

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Published: Apr 2, 2005 |