HY57V561620CTP, HY57V561620CT 4 Banks x 4M x 16Bit Synchronous DRAM

Hynix Semiconductor

Description

www.DataSheet4U.com HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM .
The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory d.

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HY57V561620CTP Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V561620CTP, HY57V561620CT. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY57V561620CTP, HY57V561620CT
Manufacturer: Hynix Semiconductor
File Size: 251.31 KB
Datasheet: HY57V561620CT_HynixSemiconductor.pdf
Description: 4 Banks x 4M x 16Bit Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HY57V561620CTP, HY57V561620CT.
Please refer to the document for exact specifications by model.

Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UD

Applications

* which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16. HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the

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HY57V561620CT Banks 16Bit Synchronous DRAM Hynix Semiconductor

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