HY57V561620BLT-I, HY57V561620BT-I 4 Banks x 4M x 16Bit Synchronous DRAM

Hynix Semiconductor

Description

HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM .
The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and.

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HY57V561620BLT-I Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V561620BLT-I, HY57V561620BT-I. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY57V561620BLT-I, HY57V561620BT-I
Manufacturer: Hynix Semiconductor
File Size: 181.98 KB
Datasheet: HY57V561620BT-I-HynixSemiconductor.pdf
Description: 4 Banks x 4M x 16Bit Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HY57V561620BLT-I, HY57V561620BT-I.
Please refer to the document for exact specifications by model.

Applications

* which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B-I is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data pat

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HY57V561620BT-I Banks 16Bit Synchronous DRAM Hynix Semiconductor

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