CS60N06AQ3 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS60N06AQ3
Manufacturer	Huajing Microelectronics
File Size	1.82 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS60N06AQ3-HuajingMicroelectronics.pdf

CS60N06AQ3 Product details

Description

CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is PDFN5×6, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data:57nC) l Low Reverse transfer capacitances(Typical:180pF) l 100% Single Pulse avalanche energy Test.

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Published: Jan 30, 2019 |