Click to expand full text
Silicon N-Channel Power MOSFET
○R
CS60N12 A8
General Description：
CS60N12 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
VDSS ID PD(TC=25℃)
RDS(ON)Typ
120 V
60
A
198 W
15 mΩ
l Fast Switching l Low ON Resistance(Rdson≤20mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:112.9pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS60N12A8 Datasheet
