CS60N04A4 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS60N04A4, Silicon N-Channel Power MOSFET

CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficie

CS60N04A4 Features

* l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.5 mΩ Applications： Power switch circuit of adaptor and c