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CS60N03AQ4-G - Silicon N-Channel Power MOSFET

Description

CS60N03 AQ4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤4. 5 mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet preview – CS60N03AQ4-G

Datasheet Details

Part number CS60N03AQ4-G
Manufacturer CR Micro
File Size 736.42 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS60N03AQ4-G Datasheet
Additional preview pages of the CS60N03AQ4-G datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET CS60N03 AQ4-G General Description： CS60N03 AQ4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN3.3*3.3, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤4. 5 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ Absolute（Tj= 25℃ unless otherwise specified） ○R 30 V 60 A 32.8 W 3.
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