CS130N10A8 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS130N10A8, Silicon N-Channel Power MOSFET

CS130N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM applications.

The VDSS ID（Silicon limi

CS130N10A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor, charger, inverter, electric vehicle and charging pile. Absolute（Tj= 25℃ unless otherwise specified） S