CS13N50A8H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS13N50A8H
Manufacturer	Huajing Microelectronics
File Size	357.08 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS13N50A8H-HuajingMicroelectronics.pdf

CS13N50A8H Product details

Description

VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |