Datasheet Details
| Part number | CS13N10AQ4-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 840.72 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS13N10AQ4-G-CRMicro.pdf
|
| Part number | CS13N10AQ4-G |
|---|---|
| Manufacturer | CR Micro |
| File Size | 840.72 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS13N10AQ4-G-CRMicro.pdf
|
CS13N10 AQ4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is PDFN3.3 3.3, which accords with the Halogen Free standard.
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