Datasheet Details
- Part number
- CS10N80FA9D
- Manufacturer
- Huajing Microelectronics
- File Size
- 546.41 KB
- Datasheet
- CS10N80FA9D-HuajingMicroelectronics.pdf
- Description
- Silicon N-Channel Power MOSFET
CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.
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