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CS10N045AE-G Silicon N-Channel Power MOSFET

CS10N045AE-G Description

Silicon N-Channel Power MOSFET ○R CS10N045 AE-G General .
CS10N045 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

CS10N045AE-G Features

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

CS10N045AE-G Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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Datasheet Details

Part number
CS10N045AE-G
Manufacturer
CR Micro
File Size
536.21 KB
Datasheet
CS10N045AE-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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