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CS10N06BE-G Silicon N-Channel Power MOSFET

CS10N06BE-G Description

Silicon N-Channel Power MOSFET ○R CS10N06 BE-G General .
CS10N06 BE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improv.

CS10N06BE-G Features

* Fast Switching
* Low ON Resistance(Rdson≤16 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

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Datasheet Details

Part number
CS10N06BE-G
Manufacturer
CR Micro
File Size
680.90 KB
Datasheet
CS10N06BE-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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