CS10N15A4 Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS10N15 A4 General .
CS10N15 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number: CS10N15A4
Manufacturer: CR Micro
File Size: 564.04 KB
Datasheet: CS10N15A4-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤300mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

Applications

* Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 10 A 36.7 W 230 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C

CS10N15A4 Distributors

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CS10N15A4 Silicon N-Channel Power MOSFET CR Micro

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