CS10N70FA9D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS10N70FA9D Datasheet Preview — Preview of CS10N70FA9D PDF

Datasheet Details

Part number	CS10N70FA9D
Manufacturer	Huajing Microelectronics
File Size	348.36 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N70FA9D-HuajingMicroelectronics.pdf

CS10N70FA9D Product details

Description

CS10N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 700 10 50 0.78 switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |