BB503M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi

Datasheet Details

Part number	BB503M
Manufacturer	Hitachi
File Size	64.75 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB503M_HitachiSemiconductor.pdf

Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “CS.
”. BB503M is individual type number of HITAC.

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Published: Jun 3, 2005 |