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BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M Description

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 .

BB506M Features

* Built in Biasing Circuit; To reduce using parts cost & PC board space.
* High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz)
* Low noise NF = 1.4 dB typ. (f = 900 MHz)
* Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)
* Provide mini mold packag

BB506M Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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