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BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. 2. Marking is “BS.
  • ”. BB502C is individual type number of HITA.

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BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. 2. Marking is “BS–”. BB502C is individual type number of HITACHI BBFET.
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