Click to expand full text
BB504C
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
REJ03G0836-0600 (Previous ADE-208-983D) Rev.6.00 Aug.10.2005
Features
www.DataSheet4U.com • Low
• Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes:
1. Marking is “DS–”. 2. BB504C is individual type number of RENESAS BBFET.
Rev.6.