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BB504C - Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features

  • www. DataSheet4U. com.
  • Low.
  • Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz.
  • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz.
  • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline.

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Datasheet Details

Part number BB504C
Manufacturer Renesas
File Size 251.72 KB
Description Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Datasheet download datasheet BB504C Datasheet

Full PDF Text Transcription

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BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 (Previous ADE-208-983D) Rev.6.00 Aug.10.2005 Features www.DataSheet4U.com • Low • Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “DS–”. 2. BB504C is individual type number of RENESAS BBFET. Rev.6.
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