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BB506M - Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

  • Built in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz).
  • Low noise NF = 1.4 dB typ. (f = 900 MHz).
  • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz).
  • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline.

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Datasheet Details

Part number BB506M
Manufacturer Renesas
File Size 165.18 KB
Description Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet download datasheet BB506M Datasheet

Full PDF Text Transcription

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BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506M is individual type number of RENESAS BBFET.
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