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K2800 - 2SK2800

Key Features

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  • Low on-resistance R DS(on) = 15 mΩ typ.
  • High speed switching.
  • Low drive current.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channe.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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K2885 2SK2885

Full PDF Text Transcription (Reference)

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2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features www.DataSheet4U.com • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.