3P
ADE-208-514 C (Z) 4th. Edition Feb 1999
D 2
1 G
1 2
33
S
1. Gate 2. Drain
(Flange) 3. Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode re.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2828. For precise diagrams, and layout, please refer to the original PDF.
2SK2828 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable f...
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ed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings Outline TO–3P ADE-208-514 C (Z) 4th. Edition Feb 1999 D 2 1 G 1 2 33 S 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
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K2828 Datasheet
