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K2826 - 2SK2826

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX. ) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX. ) (VGS = 4.0 V, ID = 35 A).
  • Low Ciss : Ciss = 7200 pF (TYP. ).
  • Built-in Gate Protection Diode.

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Full PDF Text Transcription for K2826 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2826. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed...

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RIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.

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