High speed switching
Outline
LDPAK
D
G
S
ADE-208-545 A 2nd. Edition
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2885. For precise diagrams, and layout, please refer to the original PDF.
2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switchi...
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ance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
More Datasheets from Hitachi Semiconductor (now Renesas)
K2885 Datasheet
