4V gate drive device can be driven from 5V source
Outline
TO.
220AB
D
G
1 2 S 3
1. Gate 2. Drain (Flange) 3. Source
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channe.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2800. For precise diagrams, and layout, please refer to the original PDF.
2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features www.DataSheet4U.com • Low on-resistance R DS(on) = 15 mΩ typ....
View more extracted text
Features www.DataSheet4U.com • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.DataSheet4U.
More Datasheets from Hitachi Semiconductor (now Renesas)
K2800 Datasheet
