H5N2005DS, H5N2005DL Datasheet - Hitachi Semiconductor

H5N2005DS Silicon N Channel MOS FET High Speed Power Switching

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semico.

H5N2005DS Features

* Low on-resistance www.DataSheet4U.com

* Low drive current

* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

H5N2005DL_HitachiSemiconductor.pdf

H5N2005DS Datasheet Preview — This datasheet PDF includes multiple part numbers: H5N2005DS, H5N2005DL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H5N2005DS, H5N2005DL

Manufacturer:

Hitachi Semiconductor

File Size:

89.02 KB

Description:

Silicon n channel mos fet high speed power switching.

Note:

This datasheet PDF includes multiple part numbers: H5N2005DS, H5N2005DL.
Please refer to the document for exact specifications by model.

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H5N2005DS H5N2005DL Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor

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