4AM15 - Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

Datasheet Details

Part number	4AM15
Manufacturer	Hitachi Semiconductor
File Size	83.26 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM15_HitachiSemiconductor.pdf

Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS =.
10 V, ID =.
2 A.
Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline www. DataSheet. in 4AM15 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissi.

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Published: Nov 12, 2010 |