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4AM17 - Silicon N/P-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

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Datasheet Details

Part number	4AM17
Manufacturer	Hitachi Semiconductor
File Size	62.53 KB
Description	Silicon N/P-Channel/P-Channel Power MOS FET Array
Datasheet	4AM17_HitachiSemiconductor.pdf

4AM17 Product details

Features

Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =.
10 V, ID =.
4 A.
4 V gate drive devices.
High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source www. DataSheet. in 4AM17 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage.

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Published: Nov 12, 2010 |