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4AM16 - Silicon N-Channel/P-Channel Power MOS FET Array

Hitachi Semiconductor

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Datasheet Details

Part number	4AM16
Manufacturer	Hitachi Semiconductor
File Size	113.12 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM16_HitachiSemiconductor.pdf

4AM16 Product details

Features

Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =.
10 V, I D =.
4 A.
High speed switching.
High density mounting.
Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.

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4AM17 - Silicon N/P-Channel/P-Channel Power MOS FET Array

Published: Nov 12, 2010 |