The H1N5820 by Hi-Sincerity Mocroelectronics is a PNP EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.
| Part number | H1N5820, H1N5820_Hi |
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| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 32.94 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 H1N5820_Hi-SincerityMocroelectronics.pdf
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| Note |
This datasheet PDF includes multiple part numbers: H1N5820, H1N5820_Hi. Please refer to the document for exact specifications by model. |
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The H2584 is designed for use in low voltage and low dropout regulator applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -20 V VCEO Collector to Emitter Voltage -15 V VEBO Emitter to Base Voltage -5 V IC Collector Current -10 A Characteri
