ATF-46171 - 2-10 GHz Medium Power Gallium Arsenide FET

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Datasheet Details

Part number: ATF-46171
Manufacturer: HP
File Size: 39.00 KB
Datasheet: ATF-46171-HP.pdf
Description: 2-10 GHz Medium Power Gallium Arsenide FET

ATF-46171 Product details

Description

The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range.This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.Total gate periphery is 1.25␣ millimeters.Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.This device is suitable for applications in space,

Features

High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz.
High Gain at 1 dB Compression: 11.0␣ dB Typical G 1dB at 4␣ GHz.
High Power Efficiency: 38% Typical at 4␣ GHz.
Hermetic Metal-Ceramic Stripline Package.

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2-10 GHz Medium Power Gallium Arsenide FET HP

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