ATF-45171 - 2-8 GHz Medium Power Gallium Arsenide FET

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Datasheet Details

Part number: ATF-45171
Manufacturer: HP
File Size: 38.86 KB
Datasheet: ATF-45171-HP.pdf
Description: 2-8 GHz Medium Power Gallium Arsenide FET

ATF-45171 Product details

Description

The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range.This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.Total gate periphery is 2.5 millimeters.Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.This device is suitable for applications in space, air

Features

High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz.
High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz.
High Power Efficiency: 38% Typical at 4␣ GHz.
Hermetic Metal-Ceramic Stripline Package.

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2-8 GHz Medium Power Gallium Arsenide FET HP

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