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HY4903B6 N-Channel Enhancement Mode MOSFET

HOOYI

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Description

HY4903B6 N-Channel Enhancement Mode MOSFET .
30V/314A RDS(ON)= 1. 100% Avalanche Tested. Reliable and Rugged. Lead Free an.

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Datasheet Specifications

Part number: HY4903B6
Manufacturer: HOOYI
File Size: 629.05 KB
Datasheet: HY4903B6-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Switch application
* Brushless Motor Drive
* DC-DC

HY4903B6 Distributors

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HY4903B6 N-Channel Enhancement Mode MOSFET HOOYI

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