HMS4296 N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS4296 N-Channel Super Trench Power MOSFET .
The +06 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS4296
Manufacturer: H&M Semiconductor
File Size: 455.86 KB
Datasheet: HMS4296-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Marking and p

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HMS4296 N-Channel Super Trench Power MOSFET H&M Semiconductor

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