HMS4260 N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS4260 N-Channel Super Trench Power MOSFET .
The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

📥 Download Datasheet

HMS4260 Datasheet Preview — Preview of HMS4260 PDF

Datasheet Specifications

Part number: HMS4260
Manufacturer: H&M Semiconductor
File Size: 446.77 KB
Datasheet: HMS4260-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram HMS4260 Marking a

HMS4260 Distributors

📁 Related Datasheet

HMS4294 HMS4030 HMS-23KMK381P3V HMS0864B HMS0864B-100 HMS0864B-1R0

📌 All Tags

HMS4260 N-Channel Super Trench Power MOSFET H&M Semiconductor

H&M Semiconductor HMS4260-like datasheet