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HMS3N70 - 700V N-Channel Super Junction MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS3N70
Manufacturer	H&M Semiconductor
File Size	357.91 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HMS3N70-HMSemiconductor.pdf

HMS3N70 Product details

Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.3 Unit V A Ω nC.

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Published: Jul 1, 2025 |