Description
HMS320N04/HMS320N04D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency
switching performance.
Features
* VDS =40V,ID =320A
RDS(ON)=0.5mΩ , typical @ VGS=10V ID=1A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marking