HMS330N10 - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS330N10
Manufacturer	H&M Semiconductor
File Size	769.56 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS330N10-HMSemiconductor.pdf

HMS330N10 Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =330A RDS(ON)=1.1mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.1mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS330N10 HMS330N10 TO-220 HMS330N10D HMS330N10D TO-263 Reel Size - Tape width -.

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Published: Jul 1, 2025 |